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On the propagation delay of CMOS inverters
- 1 University of Electronic Science and Technology of China
* Author to whom correspondence should be addressed.
Abstract
This research study delves into the propagation delay analysis in Complementary Metal-Oxide-Semiconductor (CMOS) inverters, aiming to uncover the factors contributing to it and exploring strategies to mitigate its impact. CMOS inverters, as pivotal constituents within digital integrated circuits, play a foundational role, making a thorough understanding of their propagation delay characteristics indispensable for the design of high-performance circuit. The research encompasses a comprehensive examination of propagation delay in CMOS inverters, addressing three key factors affecting it: load capacitance, transconductance parameters, and power supply voltage. Additionally, the study explores techniques for reducing propagation delay, including leveraging alternative materials and adopting specific layout designs. This study can provide insights into the sources of propagation delay in CMOS inverters and provide a comprehensive grasp of methods to alleviate it. By efficiently managing propagation delay, it becomes possible to enhance the overall performance and efficiency of CMOS circuits, thereby facilitating the development of advanced, high-speed digital systems.
Keywords
propagation delay, CMOS inverter, reduce delay
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Cite this article
Lan,Z. (2024). On the propagation delay of CMOS inverters. Applied and Computational Engineering,84,163-172.
Data availability
The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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Volume title: Proceedings of the 4th International Conference on Materials Chemistry and Environmental Engineering
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