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Research on the influence of total dose on the short-circuit and avalanche characteristics of SiC MOSFET power devices
- 1 Beijing Microelectronics Technology Research Institute
- 2 Beijing Microelectronics Technology Research Institute
- 3 Beijing Microelectronics Technology Research Institute
- 4 Beijing Microelectronics Technology Research Institute
- 5 Harbin Institute of Technology
* Author to whom correspondence should be addressed.
Abstract
When SiC MOSFET power devices operate under radiation environment conditions, radiation induces trap charges in their gate oxide, which affects the device's short-circuit and avalanche characteristics. The short-circuit and avalanche characteristics are crucial for the reliable operation of devices under radiation environments. To ensure the efficient and stable operation of SiC MOSFET power devices under radiation environments, this paper focuses on studying the degradation patterns of the short-circuit and avalanche characteristics of SiC MOSFET power devices after being subjected to radiation, and analyzes the degradation mechanisms through theory and simulation.
Keywords
SiC MOSFET, total dose effect, short-circuit characteristics, avalanche characteristics
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Cite this article
Chen,M.;Zhang,L.;Sun,X.;Li,Z.;Sui,C. (2024). Research on the influence of total dose on the short-circuit and avalanche characteristics of SiC MOSFET power devices. Advances in Engineering Innovation,11,24-30.
Data availability
The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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