Advantages and Challenges of Graphene Transistors for High-Frequency Applications
- 1 Northwestern Polytechnical University (NPU)
* Author to whom correspondence should be addressed.
Abstract
Graphene is regarded as an ideal material for next-generation high-frequency (HF) electronic devices, attributed to its unique two-dimensional structure, high carrier mobility, and exceptional electrical properties. In recent years, the limitations of conventional silicon-based technologies for high-frequency applications have become increasingly apparent, resulting in heightened interest in graphene transistors, which exhibit significant potential for applications in wireless communications, radar systems, and terahertz technology. These transistors exhibit high cutoff frequency and low noise characteristics, along with favorable bipolar properties, which provide them with significant advantages in radio frequency (RF) applications. However, despite the significant theoretical advantages of graphene materials, their practical application is still restricted by multiple factors. Specifically, insufficient voltage gain from weak current saturation, material uniformity issues, and large-scale production challenges have restricted the widespread adoption of graphene transistors in high-frequency electronic devices. This paper reviews the relevant literature, examines the disparity between the electrical performance and practical applications of graphene transistors, and identifies the key factors influencing their implementation. The results demonstrate that targeted bandgap engineering, innovative device architectures, and the exploration of new materials can help graphene transistors can mitigate existing challenges and position themselves as key components in future HF electronic devices, driving significant advancements and broader integration of related technologies.
Keywords
Graphene, High Carrier Mobility, Zero Bandgap, High-Frequency Applications
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Cite this article
Sun,Q. (2025). Advantages and Challenges of Graphene Transistors for High-Frequency Applications. Applied and Computational Engineering,130,193-198.
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