Relation between structural defects and trap states in graphene quantum dots perovskite solar cell

Cheng Zeng

doi:10.54254/2755-2721/7/20230319

Research Article

Open access

Published on 21 July 2023

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Zeng,C. (2023). Relation between structural defects and trap states in graphene quantum dots perovskite solar cell. Applied and Computational Engineering,7,24-28.

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Relation between structural defects and trap states in graphene quantum dots perovskite solar cell

Cheng Zeng *^,1,

¹ University of Southern California, Los Angeles, California, 90007

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/7/20230319

Abstract

Graphene quantum dots (GQDs) have recently been developed as promising interfacial engineering materials for modifying perovskite solar cells (PSC) surfaces due to their low toxicity and good charge mobility compared to other metallic-based quantum dots in semiconductors. However, the side effect of decorating PSC with GQD is that it creates more structural defects that might cause shallow trap states and non-radiative recombination, leading to decreased PSC performance. This paper reviews the impact of structural defects and trap state of GQDs and the combined corresponding influence on the performance of PSC based on thermally stimulated current (TSC) and density-voltage (J-V) plots. This paper then offers new guidelines to minimize the trade-off of GQD by suggesting a well-controlled fabrication process.

Keywords

Perovskite, Solar cell, Structural defect, Trap state, Interfacial engineering

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Cite this article

Zeng,C. (2023). Relation between structural defects and trap states in graphene quantum dots perovskite solar cell. Applied and Computational Engineering,7,24-28.

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About volume

Volume title: Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering (CONF-MCEE 2023), Part II

Conference website: https://www.confmcee.org/

ISBN：978-1-915371-61-4(Print) / 978-1-915371-62-1(Online)

Conference date: 18 March 2023

Editor：Ioannis Spanopoulos, Niaz Ahmed, Sajjad Seifi Mofarah

Series: Applied and Computational Engineering

Volume number: Vol.7

ISSN：2755-2721(Print) / 2755-273X(Online)

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