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Characteristics, application and development trend of the third-generation semiconductor
- 1 Xi’an Jiaotong-liverpool University, Suzhou, China
* Author to whom correspondence should be addressed.
Abstract
Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.
Keywords
The third-generation semiconductor, Wide Band Gap, SiC, GaN
[1]. Xinrong Xie, “The Research Progress of The third-generation Semiconductor Materials GaN”, Guangdong Chemical Industry, vol. 47, pp. 92-93, Dec. 2020. DOI: 10.3969/j.issn.1007-1865.2020.18.039
[2]. Chun Li and Junkai Deng, “Analysis of the third-generation Semiconductor Industry”, Integrated circuit applications, vol. 34, no. 2, pp. 87-99, Feb. 2017. DOI: 10.19339/j.issn.1674-25832017.02.023
[3]. Baolin Zhang et al, “Application of third-generation Wide-gap Semiconductor (SiC) Devices in Space Solar Power Station ”, SPACE ELECTRONIC TECHNOLOGY, vol. 15, no. 2, pp. 94-100, Feb. 2018. DOI: 10. 3969 / j. issn. 1674-7135. 2018. 02. 015
[4]. Jia Lin and Haosheng Huang, “Opportunities and Challenges by the third-generation Semiconductor”, Integrated circuit applications, vol. 34, no. 12, pp. 83-86, Dec. 2017. DOI: 10.19339/j.issn.1674-2583.2017.12.021
[5]. Na Wu, “Theoretical model of holographic grating mask pattern transfer and research on new technology”, Doctoral dissertation of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, May. 2013.
[6]. S. Nakamura, M. Senoh, N. Iwasa and S. N. S. Nagahama, "High-Brightness InGaN Blue Green and Yellow Light-Emitting Diodes with Quantum Well Structures", Jpn. J. Appl. Phys, vol. 34, no. 7A, pp. L797, Jul. 1995.
[7]. G. Santoruvo and E. Matioli, "In-Plane-Gate GaN Transistors for High-Power RF Applications," in IEEE Electron Device Letters, vol. 38, no. 10, pp. 1413-1416, Oct. 2017, DOI: 10.1109/LED.2017.2737658.
[8]. Xianjie Zhang, “Development and Opportunity of the third-generation Semiconductor Materials in 5G Communication Field ”, HEILONGJIANG SCIENCE, vol. 11, no. 20, pp. 42 and 45, Oct. 2020
[9]. DeepTech, “Technology development path and industrial ecology research report on the application of third-generation semiconductor SiC/GaN in new energy vehicles in 2022”.
[10]. Nong Li et al, “Patent Analysis of the third-generation Semiconductor Devices”, Technology Intelligence Engineering, vol. 5, no. 4, pp. 114-126, Apr. 2019. DOI: 10.3772/j.issn.2095-915x.2019.04.012
Cite this article
Tang,M. (2023). Characteristics, application and development trend of the third-generation semiconductor. Applied and Computational Engineering,7,41-46.
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Volume title: Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering (CONF-MCEE 2023), Part II
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