Study on short circuit effect of silicon carbide power devices

Yinghao Huang

doi:10.54254/2755-2721/9/20230027

Research Article

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Published on 25 September 2023

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Huang,Y. (2023). Study on short circuit effect of silicon carbide power devices. Applied and Computational Engineering,9,34-42.

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Study on short circuit effect of silicon carbide power devices

Yinghao Huang *^,1,

¹ University of Macau

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/9/20230027

Abstract

SiC can provide better material properties when the performance of Si - based power devices is almost developed to the limit. But compared with Si material, the reliability of SiC device is poor under ultimate stress. The short circuit capability of SiC MOSFET has been the main area of attention in this paper’s study. Through the analysis of SiC MOSFET short-circuit capability, it is mainly represented by the time that the device can withstand short-circuit stress and the time it takes for the device to be safely turned off in the event of a short circuit fault. Secondly, the detection circuit and protection circuit under the SiC MOSFET short-circuit fault are briefly studied, and the optimization ideas and working principles are summarized.

Keywords

SiC MOSFET, short circuit characteristic, protection circuit.

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References

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Cite this article

Huang,Y. (2023). Study on short circuit effect of silicon carbide power devices. Applied and Computational Engineering,9,34-42.

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The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About volume

Volume title: Proceedings of the 2023 International Conference on Mechatronics and Smart Systems

Conference website: https://2023.confmss.org/

ISBN：978-1-83558-007-3(Print) / 978-1-83558-008-0(Online)

Conference date: 24 June 2023

Editor：Seyed Ghaffar, Alan Wang

Series: Applied and Computational Engineering

Volume number: Vol.9

ISSN：2755-2721(Print) / 2755-273X(Online)

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