Based on the comparisons with various types of transistors to predict the trend of nanotube FETs in the future

Research Article
Open access

Based on the comparisons with various types of transistors to predict the trend of nanotube FETs in the future

Yunshu Hong 1*
  • 1 Dulwich International High School Zhuhai    
  • *corresponding author tony.hong24@stu.dulwich.org
Published on 25 September 2023 | https://doi.org/10.54254/2755-2721/11/20230265
ACE Vol.11
ISSN (Print): 2755-273X
ISSN (Online): 2755-2721
ISBN (Print): 978-1-83558-011-0
ISBN (Online): 978-1-83558-012-7

Abstract

With the improvement of new technology in electronic devices and the development of nanomaterials, higher better device performance and more efficient functions of Field-Effect Transistors (FETs) are expected, these require the use of material that has well-performed physical and chemical properties. Carbon nanotubes are a viable alternative, and their popularity is increasing rapidly in recent years. With the decrease in the size of the transistor, the increase in current, and the strength of magnetic and electrical fields, many problems for the creation of destructive and leaky currents occurred. This article mainly aimed to summarize three main FET types and included new carbon nanotube FETs by introducing their basic working mechanism and discussing the difficulties such as the short channel effect, gate-induced drain leakage and contact resistance. It also tries to give a few possible solutions to them which include adding a Lightly Doped Drain or using chemical doping, as well as predict how the potential of FETs in the future at the end.

Keywords:

FET, carbon nanotube-FET, leakage reduction.

Hong,Y. (2023). Based on the comparisons with various types of transistors to predict the trend of nanotube FETs in the future. Applied and Computational Engineering,11,268-275.
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References

[1]. Kim, S, Kim, J., Jang, D., et al. 2020. Applied Sciences 10, 2979.

[2]. Dan Shanefield 2016. https://www.nutsvolts.com/magazine/article/the_field_effect_transistor

[3]. David Watson 2021. FET: Definition, Symbol, Working, Characteristics, Types & Applications https://www.theengineeringprojects.com/2021/07/field-effect-transistor-fet.html.

[4]. Han Wang, Hsu, A., Jing Kong, Antoniadis, D. A., & Palacios, T. 2011 IEEE Transactions on Electron Devices, 58, 1523.

[5]. What is a FET: Field Effect Transistor: Types, Technology https://www.electronics-notes.com/articles/electronic components/fet_field_effect_transistor/what-is-a-fet-types-overvie2.php.

[6]. Sourav Gupta 2019. What is JFET: Its Construction Working and Biasing Techniques. https://circuitdigest.com/tutorial/what-is-jfet-basics-construction-working-and-biasing.

[7]. MOSFET Physics. https://www.mks.com/n/mosfet-physics.

[8]. Zahoor, Furqan, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, et al. 2021. Electronics 10, 79.

[9]. Ramezani, Z., Orouji, A.A., Ghoreishi, S.A. et al. 2019 J. Electron. Mater. 48, 7487.

[10]. Z.Zand, M.Hayati and G.Karimi, 2020 28th Iranian Conference on Electrical Engineering (ICEE), Tabriz, Iran, 2020, 1-6.

[11]. Module 5: FEOL Lecture 22: MOS transistor Processing https://archive.nptel.ac.in/content/storage2/courses/103106075/Courses/Lecture22.html.

Cite this article

Hong,Y. (2023). Based on the comparisons with various types of transistors to predict the trend of nanotube FETs in the future. Applied and Computational Engineering,11,268-275.

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The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About volume

Volume title: Proceedings of the 2023 International Conference on Mechatronics and Smart Systems

ISBN：978-1-83558-011-0(Print) / 978-1-83558-012-7(Online)
Editor：Alan Wang, Seyed Ghaffar
Conference website: https://2023.confmss.org/
Conference date: 24 June 2023
Series: Applied and Computational Engineering
Volume number: Vol.11
ISSN：2755-2721(Print) / 2755-273X(Online)

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References

[1]. Kim, S, Kim, J., Jang, D., et al. 2020. Applied Sciences 10, 2979.

[2]. Dan Shanefield 2016. https://www.nutsvolts.com/magazine/article/the_field_effect_transistor

[3]. David Watson 2021. FET: Definition, Symbol, Working, Characteristics, Types & Applications https://www.theengineeringprojects.com/2021/07/field-effect-transistor-fet.html.

[4]. Han Wang, Hsu, A., Jing Kong, Antoniadis, D. A., & Palacios, T. 2011 IEEE Transactions on Electron Devices, 58, 1523.

[5]. What is a FET: Field Effect Transistor: Types, Technology https://www.electronics-notes.com/articles/electronic components/fet_field_effect_transistor/what-is-a-fet-types-overvie2.php.

[6]. Sourav Gupta 2019. What is JFET: Its Construction Working and Biasing Techniques. https://circuitdigest.com/tutorial/what-is-jfet-basics-construction-working-and-biasing.

[7]. MOSFET Physics. https://www.mks.com/n/mosfet-physics.

[8]. Zahoor, Furqan, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, et al. 2021. Electronics 10, 79.

[9]. Ramezani, Z., Orouji, A.A., Ghoreishi, S.A. et al. 2019 J. Electron. Mater. 48, 7487.

[10]. Z.Zand, M.Hayati and G.Karimi, 2020 28th Iranian Conference on Electrical Engineering (ICEE), Tabriz, Iran, 2020, 1-6.

[11]. Module 5: FEOL Lecture 22: MOS transistor Processing https://archive.nptel.ac.in/content/storage2/courses/103106075/Courses/Lecture22.html.

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