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Advancements and trends in GaN HEMT
- 1 Shandong University
* Author to whom correspondence should be addressed.
Abstract
Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) technology has made significant advancements, revolutionizing the field of power electronics. With their unique properties such as high breakdown voltage, high frequency, and high electron mobility and high-power capabilities, GaN HEMTs offer significant advantages over traditional silicon-based devices, such as improved power density, higher operating temperature, and enhanced reliability. GaN HEMTs have shown great potential in sensing applications, such as gas and biosensors. This thesis explores the advancements and trends in GaN HEMT technology, including crystal growth technology, sensing applications, packaging technology, and performance optimization. Despite significant progress, challenges such as heat dissipation, production costs, and yield and reliability issues need to be addressed. Future research directions may focus on improving integration with other technologies, exploring potential applications in emerging fields such as 5G communication, and addressing these challenges. Overall, GaN HEMT technology has made significant advancements and is set to play a pivotal role in various industries.
Keywords
GaN HEMTs, MOCVD, sensor applications, heat dissipation
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Cite this article
Guan,W. (2023). Advancements and trends in GaN HEMT. Applied and Computational Engineering,23,245-251.
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Volume title: Proceedings of the 2023 International Conference on Functional Materials and Civil Engineering
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