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Feasibility study of wide bandgap power devices in space solar power station applications
- 1 Beijing Institute of Microelectronics Technology
- 2 Beijing Institute of Microelectronics Technology
- 3 Beijing Institute of Microelectronics Technology
- 4 Beijing Institute of Microelectronics Technology
- 5 Beijing Institute of Microelectronics Technology
* Author to whom correspondence should be addressed.
Abstract
This paper focuses on the reliability and radiation effects of wide bandgap SiC MOSFET power devices. Based on the failure issues of SiC MOSFET power devices used in space solar power stations, the paper investigates the feasibility of applying SiC MOSFET power devices in space solar power stations. By examining the failure mechanisms of wide bandgap SiC MOSFET power devices, the paper proposes reinforcement methods for radiation resistance and high reliability from both device and circuit application perspectives, providing feasible solutions for the use of these devices in space solar power stations.
Keywords
space solar power station, wide bandgap power devices, reliability, total dose effect, single particle effect
[1]. Shinohara, N. (2009). Recent wireless power transmission technologies in Japan for space solar power station/satellite. RWS, 13-15.
[2]. Matsumoto, H. (2002). Research on solar power satellites and microwave power transmission in Japan. IEEE Microwave Magazine, 36-45.
[3]. Han, Z. (2011). Introduction to radiation-resistant integrated circuits (pp. 1-12). Tsinghua University Press.
[4]. Liu, W. (2013). Radiation effects and reinforcement techniques for silicon semiconductor devices (pp. 1-6). Science Press.
[5]. Galloway, K. F. (2014). A brief review of heavy-ion radiation degradation and failure of silicon UMOS power transistors. Electronics, 3(4), 582-593.
[6]. George, J. S. (2019). An overview of radiation effects in electronics. AIP Conference Proceedings, 060002.
[7]. Adell, P., & Scheick, L. (2013). Radiation effects in power systems: A review. IEEE Transactions on Nuclear Science, 60(3), 1929-1952.
[8]. Lichtenwalner, D. J., Akturk, A., McGarrity, J., et al. (2018). Reliability of SiC power devices against cosmic ray neutron single-event burnout. Materials Science Forum, 559-562.
[9]. Sun, Y., Wan, X., Liu, Z., et al. (2022). Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation. Radiation Physics and Chemistry, 197, 110219.
[10]. Asai, H., Nashiyama, I., Sugimoto, K., et al. (2014). Tolerance against terrestrial neutron-induced single-event burnout in SiC MOSFETs. IEEE Transactions on Nuclear Science, 61(6), 3109-3114.
[11]. Tan, C. M., Pandey, V. K., Chiang, Y., et al. (2022). Electronic reliability analysis under radiation environment. Sensors and Materials: An International Journal on Sensor Technology, 3(3), 34.
[12]. Chbili, Z. (2015). Time-dependent dielectric breakdown in silicon carbide power MOSFETs.
[13]. Wang, L., Jia, Y., Zhou, X., et al. (2022). Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. Microelectronics and Reliability, 133(Jun.).
[14]. Envelope, J., Ad, A., Eb, A., et al. (2022). Benchmarking the robustness of Si and SiC MOSFETs: Unclamped inductive switching and short-circuit performance. Microelectronics Reliability.
[15]. Popelka, S., & Hazdra, P. (2016). Effect of electron irradiation on 1700V 4H-SiC MOSFET characteristics. Materials Science Forum, 856-859.
[16]. Yu, Q., Cao, S., Zhang, H., et al. (2019). Sensitivity analysis of single particle effects in SiC devices. Atomic Energy Science and Technology, 53(10), 2114-2119.
[17]. Lauenstein, J. M., Casey, M. C., Ladbury, R. L., et al. (2021). Space radiation effects on SiC power device reliability. In 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 1-8.
[18]. Martinella, C., Ziemann, T., Stark, R., et al. (2020). Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs. IEEE Transactions on Nuclear Science, 67(7), 1381-1389.
[19]. Waskiewicz, A. E., Groninger, J. W., Strahan, V. H., et al. (1986). Burnout of power MOS transistors with heavy ions of Californium-252. IEEE Transactions on Nuclear Science, 33(6), 1710-1713.
[20]. Lauenstein, J. M. (2018). Getting SiC power devices off the ground: Design, testing, and overcoming radiation threats. Microelectronics Reliability and Qualification Workshop (MRQW), El Segundo, CA. Retrieved from https://aerospace.org/MRQW
[21]. Ball, D. R., Galloway, K. F., Johnson, R. A., et al. (2020). Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes. IEEE Transactions on Nuclear Science, 67(1), 22-28.
[22]. Tang, Z. H., Li, X. J., Tan, K. Z., et al. (2018). The progress of SEB and SEGR irradiation hardening technology for power MOSFET. In 2018 European Conference on Radiation and its Effects on Components and Systems (RADECS), Gothenburg, Sweden, September 2018.
[23]. Zhou, X., Pang, H., Jia, Y., et al. (2021). Gate oxide damage of SiC MOSFETs induced by heavy-ion strike. IEEE Transactions on Electron Devices, 68(8), 4010-4015.
[24]. Kenneth, G., Arthur, W., Ronald, S., et al. (2018). Failure estimates for SiC power MOSFETs in space electronics. Aerospace, 5(3), 1-7.
Cite this article
Wang,M.;Zhao,S.;Li,Y.;Li,Z.;Zhang,L. (2025). Feasibility study of wide bandgap power devices in space solar power station applications. Advances in Engineering Innovation,16(1),28-35.
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