References
[1]. J. Serrano, “Imagining the Future of the Internal Combustion Engine for Ground Transport in the Current Context,” Applied Sciences, vol. 7, no. 10, p. 1001, Sep. 2017.
[2]. E. Chemali, M. Preindl, P. Malysz, and A. Emadi, “Electrochemical and Electrostatic Energy Storage and Management Systems for Electric Drive Vehicles: State-of-the-Art Review and Future Trends,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 1117–1134, Sep. 2016.
[3]. Shi, B., Ramones, A. I., Liu, Y., Wang, H., Li, Y., Pischinger, S., & Andert, J. A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development. IET Power Electronics. (2023).
[4]. Speer, K. M. State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects. Littelfuse, Inc. 2017.
[5]. J. Jian and J. Sun, “A Review of Recent Progress on Silicon Carbide for Photoelectrochemical Water Splitting,” Solar RRL, vol. 4, no. 7, p. 2000111, May 2020.
[6]. T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2014.
[7]. C. J. H. Wort, “Applications for Superhard and Ultra-Hard Materials,” Microstructure-Property Correlations for Hard, Superhard, and Ultrahard Materials, pp. 25–74, 2016.
[8]. T. Liu, R. Ning, et al. “Modeling and Analysis of SiC MOSFET Switching Oscillations,” IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1–1, 2016.
[9]. E. Staff, “Evaluation of 1, 200-V 300-A SiC MOSFET Switching Performance,” Power Electronics News, Jan. 12, 2021. https://www.powerelectronicsnews.com/evaluation-of-1200-v-300-a-sic-mosfet-switching-performance/
[10]. C. Langpoklakpam et al., “Review of Silicon Carbide Processing for Power MOSFET,” Crystals, vol. 12, no. 2, p. 245, Feb. 2022.
[11]. Yamada, H., Saito, R., Matsunobu, Y., Ishizu, T., & Miyazaki, T. Components and systems for electric vehicles (HEVs/EVs). Hitachi Review, 67(1), 102-103. 2018.
[12]. “SiC power modules for your electric vehicle design STMicroelectronics.” Available: https://www.st.com/content/dam/pcim-2020/presentations/stmicroelectronics-pcim2020-sic-power-modules-for-your-electric-vehicle-designs.pdf
[13]. “E-mobility SiC Traction Inverter,” 2020. Available: https://www.st.com/content/dam/AME/2020/apec-2020/presentations/APEC2020_Traction-Inverter-virtual-FINAL2.pdf
[14]. W. T. Team, “10 Components and Functions of an Electric Car,” Wuling, Apr. 30, 2022. https://wuling.id/en/blog/autotips/10-components-of-an-electric-car-and-their-functions
[15]. “Electric drive,” www.bosch-mobility-solutions.com. https://www.bosch-mobility.com/en/solutions/powertrain/battery-electric/electric-drive/
[16]. Zhou, W., Zhong, X., & Sheng, K. High temperature stability evaluation of SiC MOSFETs. In 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD) (pp. 305-308). IEEE. (2014, June).
[17]. Luo, H., Zhang, J., Wu, H., Zheng, F., Qian, J., & Chen, X. Reliability and Failure Investigation of SiC MOSFET Under Avalanche. In 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) (pp. 1-5). IEEE. (2022, August).
[18]. D. J. Lichtenwalner et al., “Performance and Reliability of SiC Power MOSFETs,” MRS Advances, vol. 1, no. 2, pp. 81–89, Jan. 2016.
[19]. X. She, A. Q. Huang, et al. “Review of Silicon Carbide Power Devices and Their Applications,” IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193–8205, Oct. 2017.
[20]. Yang, S., Lu, Y., Liu, S., Wang, H., Liu, C., & Chen, K. J. 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Prague: Czech Republic, 263, 12-16. (2016).
[21]. S. Nida, B. Kakarla, T. Ziemann, and U. Grossner, “Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions,” IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4587–4592, Sep. 2021.
[22]. Z. Zhu, N. Ren, H. Xu, L. Liu, and K. Sheng, “Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3982–3990, Aug. 2021.
[23]. M. D. P. Emilio, “SiC Power Devices: Lowering Costs to Drive Adoption,” Power Electronics News, Jan. 18, 2022. https://www.powerelectronicsnews.com/sic-power-devices-lowering-costs-to-drive-adoption/
[24]. “Application Note Design Recommendations for SiC MOSFETs Released Design Recommendations for SiC MOSFETs Microsemi Proprietary and Confidential. Application Note Revision 1.0.”
[25]. Wang, N., Jieensi, J., Zhen, Z., Zhou, Y., & Ju, S. Predicting the interfacial thermal resistance of electronic packaging materials via machine learning. In 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) (pp. 1-4). IEEE. (2022, August).
[26]. X. Hu et al., “High-energy conversion-efficiency direct-alternating-current hybrid generator with piezoelectric polylactide and dynamic Schottky diode,” Journal of Materials Science, vol. 55, no. 21, pp. 9014–9026, Apr. 2020.
Cite this article
Xu,Y. (2024). Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review. Applied and Computational Engineering,40,180-186.
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References
[1]. J. Serrano, “Imagining the Future of the Internal Combustion Engine for Ground Transport in the Current Context,” Applied Sciences, vol. 7, no. 10, p. 1001, Sep. 2017.
[2]. E. Chemali, M. Preindl, P. Malysz, and A. Emadi, “Electrochemical and Electrostatic Energy Storage and Management Systems for Electric Drive Vehicles: State-of-the-Art Review and Future Trends,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 1117–1134, Sep. 2016.
[3]. Shi, B., Ramones, A. I., Liu, Y., Wang, H., Li, Y., Pischinger, S., & Andert, J. A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development. IET Power Electronics. (2023).
[4]. Speer, K. M. State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects. Littelfuse, Inc. 2017.
[5]. J. Jian and J. Sun, “A Review of Recent Progress on Silicon Carbide for Photoelectrochemical Water Splitting,” Solar RRL, vol. 4, no. 7, p. 2000111, May 2020.
[6]. T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2014.
[7]. C. J. H. Wort, “Applications for Superhard and Ultra-Hard Materials,” Microstructure-Property Correlations for Hard, Superhard, and Ultrahard Materials, pp. 25–74, 2016.
[8]. T. Liu, R. Ning, et al. “Modeling and Analysis of SiC MOSFET Switching Oscillations,” IEEE Journal of Emerging and Selected Topics in Power Electronics, pp. 1–1, 2016.
[9]. E. Staff, “Evaluation of 1, 200-V 300-A SiC MOSFET Switching Performance,” Power Electronics News, Jan. 12, 2021. https://www.powerelectronicsnews.com/evaluation-of-1200-v-300-a-sic-mosfet-switching-performance/
[10]. C. Langpoklakpam et al., “Review of Silicon Carbide Processing for Power MOSFET,” Crystals, vol. 12, no. 2, p. 245, Feb. 2022.
[11]. Yamada, H., Saito, R., Matsunobu, Y., Ishizu, T., & Miyazaki, T. Components and systems for electric vehicles (HEVs/EVs). Hitachi Review, 67(1), 102-103. 2018.
[12]. “SiC power modules for your electric vehicle design STMicroelectronics.” Available: https://www.st.com/content/dam/pcim-2020/presentations/stmicroelectronics-pcim2020-sic-power-modules-for-your-electric-vehicle-designs.pdf
[13]. “E-mobility SiC Traction Inverter,” 2020. Available: https://www.st.com/content/dam/AME/2020/apec-2020/presentations/APEC2020_Traction-Inverter-virtual-FINAL2.pdf
[14]. W. T. Team, “10 Components and Functions of an Electric Car,” Wuling, Apr. 30, 2022. https://wuling.id/en/blog/autotips/10-components-of-an-electric-car-and-their-functions
[15]. “Electric drive,” www.bosch-mobility-solutions.com. https://www.bosch-mobility.com/en/solutions/powertrain/battery-electric/electric-drive/
[16]. Zhou, W., Zhong, X., & Sheng, K. High temperature stability evaluation of SiC MOSFETs. In 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD) (pp. 305-308). IEEE. (2014, June).
[17]. Luo, H., Zhang, J., Wu, H., Zheng, F., Qian, J., & Chen, X. Reliability and Failure Investigation of SiC MOSFET Under Avalanche. In 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) (pp. 1-5). IEEE. (2022, August).
[18]. D. J. Lichtenwalner et al., “Performance and Reliability of SiC Power MOSFETs,” MRS Advances, vol. 1, no. 2, pp. 81–89, Jan. 2016.
[19]. X. She, A. Q. Huang, et al. “Review of Silicon Carbide Power Devices and Their Applications,” IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193–8205, Oct. 2017.
[20]. Yang, S., Lu, Y., Liu, S., Wang, H., Liu, C., & Chen, K. J. 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Prague: Czech Republic, 263, 12-16. (2016).
[21]. S. Nida, B. Kakarla, T. Ziemann, and U. Grossner, “Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions,” IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4587–4592, Sep. 2021.
[22]. Z. Zhu, N. Ren, H. Xu, L. Liu, and K. Sheng, “Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 3982–3990, Aug. 2021.
[23]. M. D. P. Emilio, “SiC Power Devices: Lowering Costs to Drive Adoption,” Power Electronics News, Jan. 18, 2022. https://www.powerelectronicsnews.com/sic-power-devices-lowering-costs-to-drive-adoption/
[24]. “Application Note Design Recommendations for SiC MOSFETs Released Design Recommendations for SiC MOSFETs Microsemi Proprietary and Confidential. Application Note Revision 1.0.”
[25]. Wang, N., Jieensi, J., Zhen, Z., Zhou, Y., & Ju, S. Predicting the interfacial thermal resistance of electronic packaging materials via machine learning. In 2022 23rd International Conference on Electronic Packaging Technology (ICEPT) (pp. 1-4). IEEE. (2022, August).
[26]. X. Hu et al., “High-energy conversion-efficiency direct-alternating-current hybrid generator with piezoelectric polylactide and dynamic Schottky diode,” Journal of Materials Science, vol. 55, no. 21, pp. 9014–9026, Apr. 2020.