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From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects
- 1 University of Illinois Urbana-Champaign
* Author to whom correspondence should be addressed.
Abstract
With the swift progression of semiconductor technology, the transition from Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to Fin Field-Effect Transistors (FinFETs) and further to Gate-All-Around Field-Effect Transistors (GAAFETs) presents significant potential for the future of electronic devices and systems. This article delves into the intricate applications, challenges, and prospective evolutions associated with FinFET and GAAFET technologies. Findings suggest that these technologies are particularly apt for low-power logic systems, high-performance computing, and artificial intelligence domains. However, as dimensions shrink, challenges pertaining to heat dissipation, leakage, and manufacturing consistency become prominent. Despite these hurdles, the horizon for semiconductor technology remains bright, encompassing exploration of alternative materials such as Germanium and 2D compositions and innovative designs like U-shaped Field-Effect Transistors and Complementary Field-Effect Transistors. As the industry continues its relentless pursuit of even more efficient, smaller transistors, the exploration of alternative materials and diversification in architecture may play a pivotal role in future developments. In essence, while the semiconductor sphere confronts challenges, relentless innovation promises a future brimming with even more efficient and compact transistor technologies.
Keywords
Semiconductor technology, FinFET, GAAFET, Transistor evolution
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Cite this article
Duan,H. (2024). From MOSFET to FinFET to GAAFET: The evolution, challenges, and future prospects. Applied and Computational Engineering,50,113-120.
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Volume title: Proceedings of the 4th International Conference on Signal Processing and Machine Learning
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