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Published on 28 March 2024
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Chen,N. (2024). Exploring the development and application of LSTM variants. Applied and Computational Engineering,53,103-107.
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Exploring the development and application of LSTM variants

Nuo Chen *,1,
  • 1 Southwest Jiaotong University

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/53/20241288

Abstract

Long Short-Term Memory (LSTM) is receiving increasing attention as the development of deep learning technology. The gate structure of LSTM enhances long-term memory, forming its superior capacity to complete tasks that challenge traditional RNN. However, considering the wide variety of applications, a comprehensive understanding of the development and application of the model, which is vital for future research, is comparatively lacking. Therefore, this paper is produced with the hope of offering an overview of the development of LSTM. It shows the process of development from RNN to LSTM and explains the aim and necessity of LSTM’s birth. After that it introduces the structure of LSTM, analyses its advantages over RNN, and discusses the application of some popular LSTM variants, such as peephole LSTM, bidirectional LSTM, and GRU. Hopefully, this work can provide a more profound knowledge of LSTM's benefits and potential, identifying worthwhile avenues or fields of future research.

Keywords

Deep Learning, Neural Networks, Long Short-Term Memory (LSTM)

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Cite this article

Chen,N. (2024). Exploring the development and application of LSTM variants. Applied and Computational Engineering,53,103-107.

Data availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About volume

Volume title: Proceedings of the 4th International Conference on Signal Processing and Machine Learning

Conference website: https://www.confspml.org/
ISBN:978-1-83558-351-7(Print) / 978-1-83558-352-4(Online)
Conference date: 15 January 2024
Editor:Marwan Omar
Series: Applied and Computational Engineering
Volume number: Vol.53
ISSN:2755-2721(Print) / 2755-273X(Online)

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