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Published on 21 April 2025
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Chen,B. (2025). High Frequency Design and Efficiency Optimization of LLC Resonant Converter Based on SiC Devices. Applied and Computational Engineering,145,176-181.
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High Frequency Design and Efficiency Optimization of LLC Resonant Converter Based on SiC Devices

Bingchi Chen *,1,
  • 1 Changchun University of Technology, Changchun City, China

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/2025.22243

Abstract

With the rapid development of power electronics technology, the demand for power converters with high efficiency, high power density and high frequency response capability is increasing. In recent years, silicon carbide (SiC) devices have become a key material to meet this demand due to their excellent electrical characteristics. SiC devices not only operate stably at higher voltages and temperatures, but also have higher switching frequencies, making them ideal for high frequency and efficient power converter designs. LLC resonant converters are widely used in high power converters because of their high efficiency, soft switching characteristics and excellent voltage and current control performance. The introduction of SiC devices into the LLC resonant converter can not only improve the overall efficiency of the system, but also further reduce the volume and increase the power density under high frequency conditions. In this paper, the basic characteristics and advantages of SiC devices are analyzed, and the feasibility of their application in LLC resonant converters is described. Secondly, combined with high frequency conditions, the selection strategy of SiC devices is proposed, including voltage resistance, on-resistance, switching speed, thermal performance and other considerations. Finally, aiming at the application of SiC devices in LLC resonant converters, some efficiency optimization schemes are proposed to help improve the overall performance of the system.

Keywords

SiC device, LLC resonant converter, High frequency design, Efficiency optimization

[1]. Zhang Juntao, Lin Guoqing. Topology and control strategy of multi-mode ultra-wide output double LLC resonant converter [J/OL]. Journal of electrotechnics, 1-14 [2025-03-11]. HTTP: / / https://doi.org/10.19595/j.cnki.1000-6753.tces.242118.

[2]. Feng Xingtian, Wudao. Design of current Sharing Control System for Two-phase LLC resonant Converter [J]. Laboratory Science, 2019,28(01):12-15+19.

[3]. GAO Bowen, Du Yingchen, Zhang Yamin. Characterization of SiC MOSFET trap based on transient drain-source current variation [J/OL]. Semiconductor technology, 1-9 [2025-03-11]. http://kns.cnki.net/kcms/detail/13.1109.TN.20250306.1346.002.html.

[4]. WEI Juan. Research on the application of LLC resonant converter based on SiC device in urban rail train charger [D]. Beijing jiaotong university, 2019. DOI: 10.26944 /, dc nki. Gbfju. 2019.000452.

[5]. ZHOU Yuming, Zhou Jiahui, Liu Hangzhi. Performance of GaN/SiC Cascode devices and their application in LLC resonant converters [J/OL]. Journal of power supply, 1-13 [2025-03-11]. http://kns.cnki.net/kcms/detail/12.1420.TM.20240325.1742.006.html.

[6]. Jin Aijuan, Zhu Ting, Li Shaolong. SiC MOSFET low power harmonic drive circuit design [J]. Materials and electronic components, lancet, 2024 (11) : 1390-1398 + 1405. DOI: 10.14106 / j.carol carroll nki. 1001-2028.2024.0164.

[7]. Zhou Qi, Zhang Chenyu, Liu Ruihuang, et al. A SiC MOSFET resonant Drive Circuit for Energy Reuse [J]. ,49 semiconductor technology, 2024 (11) : 981-987. The DOI: 10.13290 / j.carol carroll nki BDTJS. 2024.11.005.

[8]. Cao Lei, Gan Zhilong. Calculation Method of Quality Factor of Resonant Circuit [J]. Journal of Electrical and Electronic Teaching, 2019,46(04):118-121. (in Chinese)

Cite this article

Chen,B. (2025). High Frequency Design and Efficiency Optimization of LLC Resonant Converter Based on SiC Devices. Applied and Computational Engineering,145,176-181.

Data availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About volume

Volume title: Proceedings of the 3rd International Conference on Software Engineering and Machine Learning

Conference website: https://2025.confseml.org/
ISBN:978-1-80590-024-5(Print) / 978-1-80590-023-8(Online)
Conference date: 2 July 2025
Editor:Marwan Omar
Series: Applied and Computational Engineering
Volume number: Vol.145
ISSN:2755-2721(Print) / 2755-273X(Online)

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