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Research on reliability of complementary metal oxide semiconductor integrated circuit
- 1 Wuhan University,Luojiashan street,Wuhan,Hubei ,430000,China
* Author to whom correspondence should be addressed.
Abstract
Complementary metal oxide semiconductor (CMOS) devices are an important part of integrated circuit (IC), but in the application process, it has many reliability problems, such as negative-bias temperature instability (NBTI), electromigration (EM), time-dependent gate oxide breakdown (TDDB), hot carrier injection (HCI), etc. These reliability problems can affect the threshold voltage and mobility of the device. In order to improve the reliability of integrated circuits, these reliability problems are systematically studied in this paper.
Keywords
NMOS, PMOS, NBTI, EM, TDDB, HCI
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Cite this article
Wu,C. (2023). Research on reliability of complementary metal oxide semiconductor integrated circuit. Applied and Computational Engineering,7,8-13.
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Volume title: Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering (CONF-MCEE 2023), Part II
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