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Metal oxide thin film transistor and its active layer materials
- 1 Department of Materials Science and Engineering, National University of Defense Technology, Changsha, Hunan, 410073, China
- 2 Department of Communication Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610000, China
- 3 Huadian Electric Power Research Institute Co., LTD, Hangzhou, Zhejiang, 310030, China
* Author to whom correspondence should be addressed.
Abstract
Metal oxide thin-film transistors (MOTFTs) have the characteristics of high electron mobility, large-area production, and relatively low fabrication temperature and have received extensive attention as a research hotspot in recent years. Based on a large number of literatures, this paper introduces the typical single-component representative of MOTFT, multi-component compound oxide semiconductor active layer materials such as IZO, IGO, IGZO, etc. At the same time, due to the unique advantages of nanomaterials, material modification is carried out in different dimensions, and six physical and chemical preparation methods of its active layer are described, including a relatively unique Low-temperature preparation method based on improved gel precursor components and UV photocatalysis. Multi-component oxides and composite structures based on nanomaterials are currently the most studied fields, and on this basis, more excellent performance can be studied and prepared. It mainly summarizes its application in large-scale display and flexible electronics and looks at its development direction.
Keywords
Thin Film Transistor, Metal Oxide, Active Layer, Semiconductor
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Cite this article
He,S.;Li,H.;Zhang,T. (2023). Metal oxide thin film transistor and its active layer materials. Applied and Computational Engineering,7,161-170.
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Volume title: Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering (CONF-MCEE 2023), Part II
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