Progress in the suppression of short-channel effects: Materials and structure

Research Article
Open access

Progress in the suppression of short-channel effects: Materials and structure

Weizhi Wang 1*
  • 1 Xiamen University Malaysia    
  • *corresponding author EEE2009237@xmu.edu.my
Published on 7 November 2023 | https://doi.org/10.54254/2755-2721/24/20230695
ACE Vol.24
ISSN (Print): 2755-273X
ISSN (Online): 2755-2721
ISBN (Print): 978-1-83558-069-1
ISBN (Online): 978-1-83558-070-7

Abstract

With the rapid development of integrated circuit (IC) technology, the size of devices has been continuously shrinking. While this trend has led to increased integration density, improved device reliability, and reduced costs, it has also resulted in performance degradation of metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the short channel effect (SCE). This paper provides a comprehensive review of the most recent techniques that can mitigate the short channel effect in MOSFETs, with a focus on semiconductor materials and device structures. These techniques include decades-long advancements in doping and high-κ dielectric materials, as well as emerging structures such as Fin field-effect transistors (FinFETs), Gate-all-around field-effect transistors (GAAFETs), Forksheet field-effect transistors, and complementary field-effect transistors (CFETs). This paper can greatly assist researchers in establishing a theoretical foundation, identifying research problems and voids, and identifying hot spots and trends in short channel effect research through a comprehensive analysis of the existing research literature.

Keywords:

short-channel effects, doping, high-κ dielectric materials, FinFET, GAAFET, CFET

Wang,W. (2023). Progress in the suppression of short-channel effects: Materials and structure. Applied and Computational Engineering,24,146-151.
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References

[1]. Moore, G. E. 1965 Electronics 38 114

[2]. Das U K and Bhattacharyya T K 2020 IEEE Trans. Electron. Devices 67 2633-2638

[3]. Lopez-Villanueva J A, Gamiz F, Roldan J B, et al. 1997 IEEE Trans. Electron. Devices 44 1425-1431

[4]. Ambrosi A, Sofer Z and Pumera M 2015 Chem. Comm. 51 8450-8453

[5]. Fan Z Q, Jiang X W, Luo J W, et al. 2017 Phys. Rev. B 96 165402

[6]. Dou L, Fan Z and Xiao P 2022 Mater. Sci. Semicond Process 139 106327

[7]. Dargar S K and Srivastava V M 2019 in Proc. of Photonics & Electromagnetics Research Symposium-Spring (PIERS-Spring) (Rome: IEEE) p 2603-2609

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[9]. Zhang Q, Li J, Tu H, et al. 2018 in Proc. of 2018 China Semiconductor Technology International Conference (CSTIC) (Shanghai: IEEE) p 1-3

[10]. Zhang Z, Xu G, Zhang Q, et al. 2019 IEEE Electron. Device Lett. 40 367-370

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[12]. Sreenivasulu V B and Narendar V 2022 Int J. Electron. Comm. 145 154069

[13]. Mertens H, Ritzenthaler R, Hikavyy A, et al. 2016 in Proc. of Symposium on VLSI Technology (Honolulu: IEEE) p 1-2

[14]. Loubet N, Hook T, Montanini P, et al. 2017 in Proc. of Symposium on VLSI Technology (Kyoto: IEEE) p T230-T231

[15]. Weckx P, Ryckaert J, Putcha V, et al. 2017 in Proc. of IEEE International Electron Devices Meeting (San Francisco: IEEE) p 20.5.1-20.5.4

[16]. Weckx P, Ryckaert J, Litta E D, et al. 2019 in Proc. of International Electron Devices Meeting (San Francisco: IEEE) p 36.5.1-36.5.4

[17]. Mertens H, Ritzenthaler R, Oniki Y, et al. 2022 in Proc. of International Electron Devices Meeting (San Francisco: IEEE) p 23.1.1-23.1.4

[18]. Ryckaert J, Schuddinck P, Weckx P, et al. 2018 in Proc. of Symposium on VLSI Technology (Honolulu, HI: IEEE) p 141-142

[19]. Luo Y, Zhang Q, Cao L, et al. 2022 IEEE Trans. Electron. Devices 69 3581-3588

[20]. Tong L, Wan J, Xiao K, et al. 2023 Nat. Electron. 6 37-44

Cite this article

Wang,W. (2023). Progress in the suppression of short-channel effects: Materials and structure. Applied and Computational Engineering,24,146-151.

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About volume

Volume title: Proceedings of the 2023 International Conference on Functional Materials and Civil Engineering

ISBN：978-1-83558-069-1(Print) / 978-1-83558-070-7(Online)
Editor：Bhupesh Kumar
Conference website: https://www.conffmce.org/
Conference date: 26 August 2023
Series: Applied and Computational Engineering
Volume number: Vol.24
ISSN：2755-2721(Print) / 2755-273X(Online)

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References

[1]. Moore, G. E. 1965 Electronics 38 114

[2]. Das U K and Bhattacharyya T K 2020 IEEE Trans. Electron. Devices 67 2633-2638

[3]. Lopez-Villanueva J A, Gamiz F, Roldan J B, et al. 1997 IEEE Trans. Electron. Devices 44 1425-1431

[4]. Ambrosi A, Sofer Z and Pumera M 2015 Chem. Comm. 51 8450-8453

[5]. Fan Z Q, Jiang X W, Luo J W, et al. 2017 Phys. Rev. B 96 165402

[6]. Dou L, Fan Z and Xiao P 2022 Mater. Sci. Semicond Process 139 106327

[7]. Dargar S K and Srivastava V M 2019 in Proc. of Photonics & Electromagnetics Research Symposium-Spring (PIERS-Spring) (Rome: IEEE) p 2603-2609

[8]. Dhiman G, Routray A, Singh S and Singh G 2021 in Proc. of 2nd International Conference for Emerging Technology (INCET) (Belagavi: IEEE) p 1-5

[9]. Zhang Q, Li J, Tu H, et al. 2018 in Proc. of 2018 China Semiconductor Technology International Conference (CSTIC) (Shanghai: IEEE) p 1-3

[10]. Zhang Z, Xu G, Zhang Q, et al. 2019 IEEE Electron. Device Lett. 40 367-370

[11]. Huang S E, You W X and Su P 2021 IEEE J. Electron. Devices Soc. 10 65-71

[12]. Sreenivasulu V B and Narendar V 2022 Int J. Electron. Comm. 145 154069

[13]. Mertens H, Ritzenthaler R, Hikavyy A, et al. 2016 in Proc. of Symposium on VLSI Technology (Honolulu: IEEE) p 1-2

[14]. Loubet N, Hook T, Montanini P, et al. 2017 in Proc. of Symposium on VLSI Technology (Kyoto: IEEE) p T230-T231

[15]. Weckx P, Ryckaert J, Putcha V, et al. 2017 in Proc. of IEEE International Electron Devices Meeting (San Francisco: IEEE) p 20.5.1-20.5.4

[16]. Weckx P, Ryckaert J, Litta E D, et al. 2019 in Proc. of International Electron Devices Meeting (San Francisco: IEEE) p 36.5.1-36.5.4

[17]. Mertens H, Ritzenthaler R, Oniki Y, et al. 2022 in Proc. of International Electron Devices Meeting (San Francisco: IEEE) p 23.1.1-23.1.4

[18]. Ryckaert J, Schuddinck P, Weckx P, et al. 2018 in Proc. of Symposium on VLSI Technology (Honolulu, HI: IEEE) p 141-142

[19]. Luo Y, Zhang Q, Cao L, et al. 2022 IEEE Trans. Electron. Devices 69 3581-3588

[20]. Tong L, Wan J, Xiao K, et al. 2023 Nat. Electron. 6 37-44

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