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A review of carbon nanotube field effect transistor from structure and properties to applications
- 1 School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China
- 2 School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China
- 3 School of Electronic Engineering, South China Agricultural University, Guangzhou, 510642, China
* Author to whom correspondence should be addressed.
Abstract
In the pursuit of next-generation electronic devices that overweigh the limitations of traditional silicon-based technologies, Carbon Nano Tube Field Effect Transistors (CNTFETs) have garnered significant attention. Unlike conventional Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), CNTFETs utilize the exceptional properties of Carbon Nanotubes (CNTs) as the channel material, promising substantial improvements in performance, power consumption, and scalability. This paper presents a comprehensive overview of CNTFETs, delving into their fundamental structures and underlying principles. It critically examines the unique characteristics that make CNTFETs an attractive alternative, including their superior carrier mobility, reduced leakage currents, and compatibility with nanoscale fabrication techniques. This review explores the application prospects of CNTFETs, spanning from high-speed digital circuits to energy-efficient sensors and beyond. Despite their promising potential, the paper also acknowledges recent challenges associated with CNTFETs, such as challenges in material synthesis, integration with existing semiconductor processes, and cost considerations. By addressing these challenges and fostering interdisciplinary research collaborations, the widespread adoption of CNTFETs in integrated circuits could revolutionize the electronics industry, enabling the development of more efficient, powerful, and sustainable devices for the future.
Keywords
CNTFET, Structure, Property, Device.
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Cite this article
Zhu,Y.;Liu,M.;Qiu,K. (2024). A review of carbon nanotube field effect transistor from structure and properties to applications. Applied and Computational Engineering,98,174-185.
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