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Influence of SiC MOSFET Drive Control Parameters on Short Circuit Characteristics
- 1 University of Electronic Science and Technology of China
* Author to whom correspondence should be addressed.
Abstract
This paper focuses on the short-circuit characteristics of SiC MOSFETs. The SiC MOSFET, categorized as a third-generation wide bandgap power semiconductor, shows significant promise for use in high-voltage applications. Short-circuit faults are categorized into hard-switch short circuits and load short circuits. The drive parameters, including Gate Resistance, Gate-Source Voltage, and DC Bus Voltage, significantly affect the short-circuit characteristics. Increasing Gate Resistance can slow down the rise rate and peak value of short-circuit current, reducing the risk of device damage, although too much Gate Resistance will slow down the switching speed. Raising the Gate-Source Voltage increases the short-circuit current peak and accelerates the rise time, but too high a Gate-Source Voltage increases the risk of device damage. The DC Bus Voltage does not have a significant effect on the short-circuit current but primarily influences the Gate-Source Voltage. Studying the influence of drive parameters on short-circuit characteristics is crucial for optimizing design and improving system stability
Keywords
Drive control parameter, Short-circuit characteristics, Silicon carbide, Short circuit protection
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Cite this article
Yu,J. (2025). Influence of SiC MOSFET Drive Control Parameters on Short Circuit Characteristics. Applied and Computational Engineering,125,40-46.
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