The Impact of Novel Semiconductor Manufacturing Processes on Field Effect Transistor Characteristics

Haoyang Ding

doi:10.54254/2755-2721/2025.KL21697

Research Article

Open access

Published on 31 March 2025

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Ding,H. (2025). The Impact of Novel Semiconductor Manufacturing Processes on Field Effect Transistor Characteristics. Applied and Computational Engineering,142,64-73.

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The Impact of Novel Semiconductor Manufacturing Processes on Field Effect Transistor Characteristics

Haoyang Ding *^,1,

¹ School of Environmental and Civil Engineering, Jiangnan University

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/2025.KL21697

Abstract

Field Effect Transistors (FETs) are at the core of modern semiconductor technology, and the miniaturization of their size has posed challenges such as short-channel effects for traditional manufacturing processes. This paper reviews the principles of three novel semiconductor fabrication techniques: Atomic Layer Deposition (ALD), Metal-Organic Chemical Vapor Deposition (MOCVD), and Pulsed Laser Deposition (PLD). It analyzes their role in optimizing FET characteristics and provides directions for overcoming the bottlenecks of traditional processes, which will aid in advancing semiconductor technology.

Keywords

Field Effect Transistor, Atomic Layer Deposition, Metal-Organic Chemical Vapor Deposition, Pulsed Laser Deposition

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Cite this article

Ding,H. (2025). The Impact of Novel Semiconductor Manufacturing Processes on Field Effect Transistor Characteristics. Applied and Computational Engineering,142,64-73.

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About volume

Volume title: Proceedings of MSS 2025 Symposium: Automation and Smart Technologies in Petroleum Engineering

Conference website: https://2025.confmss.org/

ISBN：978-1-83558-999-1(Print) / 978-1-80590-000-9(Online)

Conference date: 16 June 2025

Editor：Mian Umer Shafiq

Series: Applied and Computational Engineering

Volume number: Vol.142

ISSN：2755-2721(Print) / 2755-273X(Online)

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