Ferroelectric HfO2: A promising material for next-generation ferroelectric memory devices

Haolin You

doi:10.54254/2755-2721/7/20230306

Research Article

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Published on 21 July 2023

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You,H. (2023). Ferroelectric HfO2: A promising material for next-generation ferroelectric memory devices. Applied and Computational Engineering,7,1-7.

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Ferroelectric HfO2: A promising material for next-generation ferroelectric memory devices

Haolin You *^,1,

¹ Department of Electrical Engineering, University of Wisconsin-Madison, Madison, WI, USA

* Author to whom correspondence should be addressed.

https://doi.org/10.54254/2755-2721/7/20230306

Abstract

Recently, ferroelectric material is playing a more and more important role in the applications of semiconductor devices, especially in random access memory(RAM) devices, and transistors. Compared with traditional flash memories, FRAMs have advantages such as low operation voltage, a huge number of writes, non-volatile properties, and high write speed. However, in the early stage, the main materials used to produce FRAMs are perovskites with crystal structures. Those materials like PbTiO3/PbZr0.3Ti0.7O3 are restricted by the size and the complementary-metal-oxide-semiconductor (CMOS) technology, which is the common technology used to process semiconductor materials. Hafnium oxide material is a newly discovered material with ferroelectricity when doped with Zirconium(Zr). The Hf0.5Zr0.5O2 thin film is an ideal material for FRAMs, which has a smaller size than perovskites FRAMs and is compatible with current CMOS technology, which means lower cost and higher performance. This article aims to explain some properties of hafnium oxide materials based on different aspects, like dopants, thickness, annealing, and electrodes, and elaborate on the advantages of FRAMs made by hafnium oxide materials.

Keywords

HfO2, ferroelectricity, FeRAM

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Cite this article

You,H. (2023). Ferroelectric HfO2: A promising material for next-generation ferroelectric memory devices. Applied and Computational Engineering,7,1-7.

Data availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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About volume

Volume title: Proceedings of the 3rd International Conference on Materials Chemistry and Environmental Engineering (CONF-MCEE 2023), Part II

Conference website: https://www.confmcee.org/

ISBN：978-1-915371-61-4(Print) / 978-1-915371-62-1(Online)

Conference date: 18 March 2023

Editor：Ioannis Spanopoulos, Niaz Ahmed, Sajjad Seifi Mofarah

Series: Applied and Computational Engineering

Volume number: Vol.7

ISSN：2755-2721(Print) / 2755-273X(Online)

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