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Simulation study on dynamic characteristics of SiC MOSFET
- 1 Waseda University
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Abstract
In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using TCAD software. In the two devices with the same volume, the trench gate structure has the larger switching loss.
Keywords
SiC MOSFET, modelling, double pulse test, switching loss
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Cite this article
Che,H. (2023). Simulation study on dynamic characteristics of SiC MOSFET. Theoretical and Natural Science,5,803-812.
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The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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