Advantages of FINFET over traditional CMOS: Reasons and implications
- 1 Shandong University
* Author to whom correspondence should be addressed.
Abstract
In the relentless march of technological advancement, the semiconductor industry remains at the forefront of innovation. Among the myriad breakthroughs, FinFET technology stands out as a recent focal point in research. Serving as an avant-garde semiconductor manufacturing process, FinFET plays a pivotal role in enhancing chip performance, diminishing power consumption, and minimizing component size. At its core, FinFET is a distinct type of field-effect transistor (FET) that utilizes a thin silicon “fin” as the conducting channel. This structure has revolutionized the way transistors are designed, offering remarkable control over the current flow through the channel. This control is achieved by wrapping a gate material around the three visible sides of the fin, which provides superior switching behavior and leakage reduction. Beyond its foundational principles, FinFET’s inherent characteristics offer numerous advantages. For instance, the technology paves the way for more densely packed transistors, enabling more powerful yet compact integrated circuits. Moreover, its innovative design leads to more energy-efficient chips, which are crucial for today’s demanding computing and electronic environments.
Keywords
FINFET, CMOS, Size, Power Consumption, Integrated Circuit
[1]. Chauhan, V., & Samajdar, D. P. (2021). Recent advances in negative capacitance FinFETs for low-power applications: a review. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 68(10), 3056-3068.
[2]. Wang, W. (2022, September). A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design. In 2022 International Conference on Applied Physics and Computing (ICAPC) (pp. 211-218). IEEE.
[3]. Mandadi, P. (2021). Design and Performance Evaluation of 8T SRAM Cell Using FinFET and CMOS at 16nm Technology (Doctoral dissertation, Texas A&M University-Kingsville).
[4]. Ahmed, M. A., Khalaf, M. Z., & Hüseyin, D. (2023). Study of finfet transistor. Critical and literature review in finfet transistor in the active filter. 3 c TIC: cuadernos de desarrollo aplicados a las TIC, 12(1), 65-81.
[5]. Mushtaq, U., & Sharma, V. K. (2021). Performance analysis for reliable nanoscaled FinFET logic circuits. Analog Integrated Circuits and Signal Processing, 107, 671-682.
[6]. Theja, A., Vikas, A., Panchore, M., & Cecil, K. (2023). FinFET Process Technology for RF and Millimeter Wave Applications. RF Circuits For 5G Applications: Designing with mmWave Circuitry, 189-221.
[7]. Copetti, T., Balen, T. R., Brum, E., Aquistapace, C., & Bolzani Poehls, L. (2020). Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects. Journal of Electronic Testing, 36, 271-284.
[8]. Zhu, X., Zhang, Y., Zhao, Z., & others. (2019). Radio frequency sensing based environmental monitoring technology. In Fourth International Workshop on Pattern Recognition (Vol. 11198, pp. 187-191). SPIE.
[9]. Vallabhuni, R. R., Koteswaramma, K. C., & Sadgurbabu, B. (2020, October). Comparative validation of SRAM cells designed using 18nm FinFET for memory storing applications. In Proceedings of the 2nd International Conference on IoT, Social, Mobile, Analytics & Cloud in Computational Vision & Bio-Engineering (ISMAC-CVB 2020).
[10]. Lakshmi, T. V., & Kamaraju, M. (2021). A review on SRAM memory design using FinFET technology. International Journal of System Dynamics Applications (IJSDA), 11(6), 1-21.
Cite this article
Shan,T. (2023). Advantages of FINFET over traditional CMOS: Reasons and implications. Theoretical and Natural Science,14,219-223.
Data availability
The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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